年度2005
等級SCI
論文名稱Characteristics of superjunction lateral-double-diffusion metal oxide semiconductor field effect transistor and degradation after electrical stress.
期刊名稱Japanese Journal of Applied Physics
全部作者Jyh-Ling LIN,Ming-Jang LIN,Li-Jheng LIN
卷號45
期號4A
頁次2451-2454
總頁數4
著作人數3
作者型態First AuthorCorresponding Author / First AuthorCorresponding Author
使用語言英文