年度2009
類別SCI
等級SCI
論文名稱Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal-Oxide-Semiconductor Using Excimer Laser Crystallization
會議名稱Japanese Journal of Applied Physics 2009
會議地點Japan
會議開始時間2009-10-01
會議結束時間2009-10-01
全部作者Lin, J. L.*; Chen, H. J.; Chang, F. L.; Cheng, H. C
著作人數4
作者型態Corresponding Author